Sandia National Labs FY20 LDRD Annual Report
FY20 ANNUAL REPORT
Distributed computational algorithms focusing on modeling and demonstration of transformer cyber resilience. The current power system depends on thousands of generators working in unison (phase and frequency must match) to meet the nation’s ever-increasing power demands. This synchronization requirement makes large AC electrical grids vulnerable to cascading
failures. The transition to an ever-more interconnected and “smarter” grid has made the electrical grid vulnerable to cyberattack. Solid-state transformers (SST) have the potential to prevent/reduce cascading failures. This one Sandia Resilient Energy Systems LDRD project, done in collaboration with Purdue, resulted in an innovative SST that will enable energy system security and resilience. (PI: Karina Munoz-Ramos)
Solid-state transformer devices achieve 100 kW output and electromagnetic- interference compliance.
Response of GaN-based semiconductor devices to ion and neutron irradiation. Novel radiation- hardened electronics are based on gallium nitride (GaN), so it’s critical to understand their damage mechanisms and response to multiple radiation environments. The research team used ion
and neutron irradiations to study the effects of ionization and displacement damage on GaN-based semiconductor devices. The results provided knowledge on the radiation hardening levels of GaN-based devices, ion-to-neutron damage equivalency, and knowledge about temperature and current injection annealing of GaN. The radiation effects community working to develop devices used in strategically radiation- hardened systems across Sandia are benefitting from the project findings. (PI: Brandon Aguirre) GaN-based semiconductor devices were exposed to ion and neutron radiation environments at (top left) Annular Core Research Reactor, (top right) White Sands Missile Range, and (bottom right) Ion Beam Laboratory to explore the damage mechanisms responsible for device degradation such as light output in (bottom left) high-intensity InGaN LEDs.
GaN-based power devices are targeted for some applications – for example, Raytheon GaN HEMT technology provided a major boost to Navy radar systems.
LABORATORY DIRECTED RESEARCH & DEVELOPMENT
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